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High side gate drivers │GaN EiceDRIVER™

High side gate drivers │GaN EiceDRIVER™
Drive high voltage gallium nitride (GaN) HEMTs with the most robust and efficient single-channel isolated GaN EiceDRIVER™ IC on the market

Gallium nitride CoolGaN™ e-mode HEMTs are best driven by Infineon’s GaN EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F and 1EDS5663H gate driver ICs. They ensure robust and highly efficient high voltage gallium nitride switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.

Schematic Description

Schematic Description

Key advantages of designing with the GaN EiceDRIVER™ gate driver ICs

Positive and negative gate drive currents
•Fast turn-on / turn-off GaN switch slew rates
Firmly holds gate voltage at zero, during off-phase
•Avoids spurious GaN switch turn-on
•Up to 50% lower dead time losses
Configurable and constant GaN switching slew rates, across wide range of switching frequency and duty cycle
•Robust and energy efficient SMPS designs
•Short time-to-market
Integrated galvanic isolation
•Robust operation in hard-switching applications
•Safe isolation where needed
Key features and use cases of GaN EiceDRIVER™ gate driver ICs
Low ohmic outputs:
Source: 0.85Ω
Sink: 0.35Ω
Single-channel galvanic isolation:
Functional: VIO= 1500VDC
VIOWM = 510Vrms (16-pin DSO)
VIOWM = 460Vrms (LGA 5x5)
Reinforced: VIOTM = 8000Vpk
(VDE 0884-10 pending)
VIOWM = 1420 VDC
CMTI min: 200V/ns
Minimum output pulse width: 18ns
Propagation delay accuracy: 13ns
Key use cases
•Totem pole PFCs
•Vienna rectifiers
•Multi-level topologies
•Resonant LLC

Document Download

Infineon the world power semiconductor leader provides a lot of technical documents for GaN and GaN Driver ICs.
We would like to introduce those technical articls and documets.

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