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High side gate drivers │GaN EiceDRIVER™
Gallium nitride CoolGaN™ e-mode HEMTs are best driven by Infineon’s GaN EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F and 1EDS5663H gate driver ICs. They ensure robust and highly efficient high voltage gallium nitride switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.
Schematic Description
Key advantages of designing with the GaN EiceDRIVER™ gate driver ICs
Positive and negative gate drive currents
•Fast turn-on / turn-off GaN switch slew rates
Firmly holds gate voltage at zero, during off-phase
•Avoids spurious GaN switch turn-on
•Up to 50% lower dead time losses
Configurable and constant GaN switching slew rates, across wide range of switching frequency and duty cycle
•Robust and energy efficient SMPS designs
•Short time-to-market
Integrated galvanic isolation
•Robust operation in hard-switching applications
•Safe isolation where needed
Key features and use cases of GaN EiceDRIVER™ gate driver ICs
Low ohmic outputs:
Source: 0.85Ω
Sink: 0.35Ω
Single-channel galvanic isolation:
Functional: VIO= 1500VDC
VIOWM = 510Vrms (16-pin DSO)
VIOWM = 460Vrms (LGA 5x5)
Reinforced: VIOTM = 8000Vpk
(VDE 0884-10 pending)
VIOWM = 1420 VDC
CMTI min: 200V/ns
Timing:
Minimum output pulse width: 18ns
Propagation delay accuracy: 13ns
Key use cases
•Totem pole PFCs
•Vienna rectifiers
•Multi-level topologies
•Resonant LLC
Document Download
- Power and Sensing Selection guide 2019（16.36 MB）
- Product Brief GaN EiceDRIVER™ family（685 KB）
- Solution Brief CoolGaN™ and GaN EiceDRIVER™（245 KB）
- GaN EiceDRIVER™ product family Data Sheet（1.27 MB）
- Application Note 600 V CoolGaN™ half-bridge evaluation platform featuring GaN EiceDRIVER™（2.01 MB）
- Product Selection Guide CoolGaN™ e-mode HEMTs（9.69 MB）
- POWER & Sensing Guide 2019 !!（16.36 MB）
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1EDS5663HXUMA1
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1EDF5673FXUMA1
