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Silicon Carbide CoolSiC™ MOSFETs & CoolSiC™ Hybrid Modules

Silicon Carbide CoolSiC™ MOSFETs & CoolSiC™ Hybrid Modules
Silicon Carbide CoolSiC™ semiconductor products - revolution to rely on
Our Silicon Carbide CoolSiC™ semiconductor solutions are the next step towards an energy-smart world. Combining revolutionary Silicon Carbide (SiC) technology with extensive system understanding, best-in-class packaging, and manufacturing excellence, Infineon CoolSiC™ enables you to develop radical new product designs with best system cost-performance ratio.

Based on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional Silicon based switches like IGBTs and MOSFETs, the Silicon Carbide (SiC) MOSFET offers a series of advantages. CoolSiC™ MOSFET first products in 1200 V target photovoltaic inverters, battery charging and energy storage. Silicon Carbide CoolSiC™ MOSFET represents the best performance, reliability and ease of use for system designers. Silicon Carbide (SiC) opens up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability.

Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow creating devices which outperform by far the corresponding Si ones. This way you can reach unattainable efficiency levels in your designs.

Schematic Description

Schematic Description
Enhancing new materials to offer customers extended levels of performance
In comparison to traditional silicon (Si) based high voltage (>600V) switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200V switches, no reverse recovery losses of the anti-parallel diode, temperature independent low switching losses, and threshold-free on-state characteristics.
Infineon’s unique 1200V CoolSiC™ MOSFET adds additional advantages. Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness. This is the revolution you can rely on.
All this results in a robust Silicon Carbide MOSFET, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches allowing for system size reduction, power density increases and high lifetime reliability.
•Highest efficiency for reduced cooling effort
•Longer lifetime and higher reliability
•Higher frequency operation
•Reduction in system cost
•Increased power density
•Reduced system complexity
•Ease of design and implementation
•Low device capacitances
•Temperature independent switching losses
•Intrinsic diode with low reverse recovery charge
•Threshold-free on-state characteristics
◎Potential Applications
•Photovoltaic inverters
•Battery charging & formation
•Server and telecom power
•Servo and Motor drives
•Energy storage & UPS
•Industrial SMPs
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