Gallium Nitride (GaN)
Industrial & Multi Market
Gallium Nitride (GaN)
Gallium nitride (GaN) offers fundamental advantages over silicon. In particular the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon switches, which makes GaN HEMTs great for high speed switching.
Schematic Description
Infineon's gallium nitride CoolGaN™ family adds significant value to a broad variety of systems across many applications. These e-mode HEMTs target consumer and industrial applications such as server, datacom, telecom, adapter/charger, wireless charging and audio with the most robust and performing concept in the market.
（more info）
Document Download
Server SMPS
By implementing gallium nitride CoolGaN™ e-mode HEMTs in a totem pole PFC combined with a LLC DC-DC stage, >98.5% system efficiency can be achieved (for 48V output voltage systems) providing a total of 2 billion kWh annual savings for US data centers (~ 300 million USD annual savings @ 0.15 USD/kWh).
GaN based SMPS solutions enable more compute power per rack by pushing the power density to >80W/in3 from today’s typical ~30..40 W/in3 of silicon based solutions.
Telecom SMPS
Operating expense (OPEX) and capital expenditure (CAPEX) savings, overall reduction of power supply footprint and highest solution robustness have been and will remain in the focus of telecommunication infrastructure development. Infineon’s gallium nitride CoolGaN™ solution addresses these challenges by providing benchmark efficiency in the entire operation range, maximizing power density while following Infineon’s stringent qualification regime.
Adapter and Charger
Infineon’s CoolGaN™ is a breakthrough for adapter and charger systems, enabling ~20W/in3 power density (for 65W maximum output power). This advantage can be realized by implementing CoolGaN™ in a half-bridge topology that enables increased switching frequency and efficiency simultaneously.
Wireless Charging
Gallium Nitride CoolGaN™ emode HEMTs enable optimal tuning in class E amplifiers especially above 30W, and offers major advantages over silicon in 6.78MHz wireless charging.
•Low almost linear COSS without large increase at low VDS enables ZVS operation over wide load impedance range
•Very low QG compared to equivalent silicon MOSFET
•5V gate drive, very low gate drive losses
•Robust devices – self clamping gate instead of Schottky gate structure
Class D Audio Amplifier
Infineon’s CoolGaN™ technology allows approaching the theoretical ideal performance of class D audio amplifiers. Due to its unique characteristics, perfectly suited for this application: zero reverse recovery charge (QRR) of the body diode, linear input and output capacitances, and extremely fast switching speeds (lowest QGD and RG) result in ideal switching waveforms, close to an ideal switch. These ideal switching waveforms are the prerequisite to maximize audio performance and minimize power losses in class D audio amplifier.
Gallium nitride CoolGaN™ 400V e-mode HEMTs are in development, coming soon.
- CoolGaN™ e-mode HEMTs Selection Guide （9.69 MB）
- Infineon EiceDRIVER™ gate driver ICs Selection Guide （14.88 MB）
- Product brief GaN EiceDRIVER™ family（685 KB）
- Solution Brief CoolGaN™ and GaN EiceDRIVER™（245 KB）
- Data Sheet IGLD60R070D1（478 KB）
- Data Sheet IGO60R070D1（498 KB）
- Data Sheet IGOT60R070D1（493 KB）
- Data Sheet IGT60R070D1（505 KB）
- Data Sheet IGT60R190D1S（513 KB）
- Application Note 2500 W full-bridge totem-pole PFC Using CoolGaN™（3.65 MB）
- Application Note 600 V CoolGaN™ half-bridge evaluation platform featuring GaN EiceDRIVER™（2.01 MB）
- Package Guide （4.57 MB）
- Power & Sensing Guide 2019 !!（16.36 MB）
GALLERY
Purchase from Here
-
IGO60R070D1AUMA1
-
IGOT60R070D1AUMA1
-
IGT60R070D1ATMA1
-
IGT60R190D1SATMA1