SiC (SILICONE carbide) is a next-generation compound semiconductor that uses an epitaxial (epi) film that is superior to conventional Si (SILICONE) semiconductors. The thicker the epitaxial film, the higher the withstand voltage, but because this film is also the main cause of resistance, making it thicker also increases voltage drop, resulting in loss.
However, because the electric field strength of SiC epitaxial film is higher than that of SILICONE, it can achieve a higher breakdown voltage than SILICONE even with the same thickness, thereby achieving both low VF and high breakdown voltage at the same time.

SiC has extremely small reverse recovery charge and capacitance components compared to SILICONE, allowing for fast SWITCHES operations (see diagram on the right). This significantly reduces the transition loss that occurs when SWITCHES on and off.

Vishay's SiC Schottky barrier DIODES use a structure known as MPS (Merged PIN Schottky), which has a p+ layer embedded in a portion of the n- layer. This structure allows for the flow of large instantaneous currents and minimizes the increase in VF that accompanies large currents. In other words, they are able to withstand large surge currents.
Furthermore, Vishay's SiC Schottky barrier DIODES use laser annealing technology to keep VF low and minimize power consumption during light loads and standby due to their low leakage current.
Furthermore, there is no tail current, which contributes to reducing SWITCHES losses.

In addition to the conventional 650V model, a 1200V model has also been released. It achieves low VF, Qg, and large IFSM at 5 to 40A as shown below.

Assuming use in PFC and LLC, two types of circuits have been implemented in the SOT-227 package as shown below. A 120A version is also available.
Because this module uses SiC, the reverse recovery charge is even smaller than that of high-speed FRDs, which contributes to low SWITCHES losses.
These devices achieve a breakdown voltage of 650V to 1200V and a junction temperature resistance of 175°C due to their low thermal resistance.
In addition, since the SOT-277 is a general-purpose package, it can be easily replaced with an existing SOCKETS.

Vishay's SiC Schottky DIODES are suitable for use in applications requiring high-speed, low-loss ON/OFF switching at 600 to 800 V.
Examples include ACDC (Power Factor Correction) circuits, high-frequency rectifier circuits, LLC resonant converter circuits, etc. Devices that should use SiC DIODES in these circuits include POWER SUPPLIES for servers and communications equipment, uninterruptible POWER SUPPLIES supplies (UPS), and INVERTERS devices for solar power generation systems.
Using Vishay SiC for these devices contributes to high product efficiency through low VF, Rds, and low SWITCHES loss.