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Vishay Intertechnology, Inc.
Introducing "XClampR™" TVS DIODES with excellent POWER SUPPLIES surge clamping characteristics
Vishay Intertechnology, Inc.
Vishay Intertechnology, Inc.
  • Vishay Intertechnology, Inc.
  • NEXT Mobility
  • ICT and Industrial

Vishay TVS DIODES

  • Vishay, which develops a variety of power circuit components, has released the XClampR™ TVS, which has a lower clamping voltage than conventional TVS DIODES.
    This page provides details on TVS DIODES for automotive and industrial applications, including XClampR™ TVS diodes, as well as an overview of TVS DIODES and how to select them.

    • TVS DIODES Overview

    What is a TVS DIODES?

    A TVS DIODES is a type of ZENER DIODES, and this device absorbs and dissipates various surges that occur on POWER SUPPLIES lines (such as load dump surges in automobiles).
    This reduces surge wave height and is used to protect subsequent circuits; this is DIODES a TVS DIODES.

    Typical electrical characteristics of TVS DIODES

    VWM (standoff voltage): The voltage at which the TVS DIODES does not clamp the surge.
    VBR (Breakdown voltage): The voltage at which the TVS DIODES begins to clamp the surge
    IPP (surge peak current): The peak value of the surge current flowing through a TVS DIODES
    VC (clamp voltage): The maximum TERMINALS output voltage when the surge peak current mentioned above flows through the TVS DIODES

    Diagram showing the electrical characteristics of a TVS DIODES

    How to Select a TVS DIODES

    When selecting an appropriate TVS DIODES, it is necessary to consider the polarity (positive or negative) of the surge to be absorbed, the clamping characteristics, and the power resistance.

    Surge Polarity

    When selecting an appropriate TVS DIODES, it is necessary to consider the polarity (positive or negative) of the surge to be absorbed, the clamping characteristics, and the power resistance.

    Typical electrical characteristics of TVS DIODES

    SiC has extremely small reverse recovery charge and capacitance components compared to SILICONE, allowing for fast SWITCHES operations (see diagram on the right). This significantly reduces the transition loss that occurs when SWITCHES on and off.

    Diagram showing the electrical characteristics of a TVS DIODES

    Vishay TVS DIODES

    Standard TVS DIODES (TRANZORB/PAR series)

    A representative lineup of Vishay's standard eSMP packaged TVS DIODES is shown below.
    Vishay's standard TVS DIODES include the TRANZORB series, which supports VBR up to nearly 500V and is suitable for industrial applications, and the PAR series, which guarantees a junction temperature of 185° and is suitable for automotive applications.
    For more detailed information on the lineup, including the eSMP package, please see the link below.

    Low Clamp TVS DIODES "XClampR" Lineup

    The current lineup consists of the following three products:

    PARAMETERSYMBOLXMC7K24CAXLD5A24CAXLD8A24CA
    Maximum working stand-off voltageVWM24V
    Breakdown voltageVBR26.7V to 29.5V
    Maximum clamping voltageVCL_max24V26V26V
    Maximum peak pulse powerPPPM (10us/1000us)7000W7700W11000W
    PPPM (10us/10000us)1200W4600W7000W
    Maximum peak pulse currentIPPM (10us/1000us)180A200A300A
    IPPM (10us/10000us)30A120A180A
    PackagePackageDO-214ABDO-218AB

    Vishay TVS DIODES Use Cases

    TVS DIODES are designed to protect sensitive electronic equipment from voltage transients induced by inductive load SWITCHES and lightning, and as mentioned above, the PAR series is intended for automotive applications such as load dump, while the TRANZORB series is intended for industrial applications.
    In addition, the newly released XClampR™ can be used in the following use cases by connecting it in series with a standard TVS as shown in the figure to increase the clamp voltage.

    ・Automotive load dump protection
    - DC link CAPACITORS protection for 48 V powertrains
    ・Drive circuit protection for robot arms and industrial applications

    XClampR™ TVS also has snapback characteristics, so VBR≒VC.

    Features of Vishay's SiC Schottky DIODES

    Vishay's SiC Schottky barrier DIODES use a structure known as MPS (Merged PIN Schottky), which has a p+ layer embedded in a portion of the n- layer. This structure allows for the flow of large instantaneous currents and minimizes the increase in VF that accompanies large currents. In other words, they are able to withstand large surge currents.
    Furthermore, Vishay's SiC Schottky barrier DIODES use laser annealing technology to keep VF low and minimize power consumption during light loads and standby due to their low leakage current.
    Furthermore, there is no tail current, which contributes to reducing SWITCHES losses.

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