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CoolSiC™ MOS FETS "CoolSiC™ MOS FETS supports next-generation electrification" High efficiency, high voltage resistance, and high reliability. SiC power MOS FETS ideal for EVs, renewable energy, and industrial equipment.

Infineon Technologies AG
Infineon Technologies AG
  • Infineon Technologies AG
  • NEXT Mobility
  • ICT and Industrial

Product overview

CoolSiC™ MOS FETS are next-generation power semiconductors that use Infineon's SiC (SILICONE carbide) technology. Compared to conventional Si-based MOS FETS, they achieve significantly reduced SWITCHES losses, high voltage resistance (400V to 3300V), and high-temperature operation (up to 200°C). They are ideal for applications that demand efficiency and reliability, such as EV traction INVERTERS, on-board chargers, solar INVERTERS, and industrial POWER SUPPLIES. They are increasingly being adopted by OEMs and Tier 1s worldwide, and are compliant with the automotive standard AEC-Q101.

List of main features and specifications

High withstand voltage: 400V to 3300V lineup supports high voltage applications
Low SWITCHES losses: Fast SWITCHES maximizes system efficiency
High temperature operation: Improved reliability at junction temperatures up to 200°C
Automotive compatible: AEC-Q101 compliant, ideal for EV applications
Wide range of packages: TO-247, D²PAK, EasyPACK™ and more

Benefits of implementation

problemssolution
Large power loss makes thermal design difficultLow loss reduces heat generation and reduces cooling costs
Unstable operation at high voltages and high frequenciesStable operation with high-speed SWITCHES unique to SiC
Concerns about reliability in automotive applicationsAEC-Q101 compliant to ensure high reliability
Want to reduce the system sizeHigh efficiency reduces the number and size of parts

Use cases and implementation examples

Use Case 1: DC Fast EV CHARGERS (150–350 kW: Modular)

[Use case overview]
The mainstream is a modular design in which 30–75 kW class subunits are stacked on a 19-inch rack. The use of CoolSiC™ has achieved both high SWITCHES speed and low loss, and there are reported examples of this contributing to device miniaturization (approximately 1/3) and short charging times.

[Major features]
Trench SiC for low loss hard/soft SWITCHES
High-density mounting using heat-resistant packages such as Q-DPAK
EiceDRIVER™ provides safe driving with high CMTI, active Miller, and negative V drive

Use Case 2: Automotive On-Board Charger (OBC)/Bidirectional DC-DC

[Use case overview]
For OBC/DCDC, it is essential to optimize the four elements of size, weight, efficiency, and noise.
The 1200 V M1H has a wide gate drive margin and robustness, making it resistant to high frequencies.
The 750 V G2 is suitable for both automotive and industrial applications thanks to its PTO resistance and low RDS(on) characteristics.

[Major features]
M1H: Wider gate voltage window, short circuit resistance, low loss (design margin). XT/Q-DPAK/TO-247-4 reduces heat/parasitics and simplifies design.
750 V G2: Compliant with AEC-Q101, improving RDS(on) × Qoss and Qgd/Qgs ratios to boost efficiency

Use Case 3: Solar INVERTERS /energy storage (ESS)/UPS

[Use case overview]
PV/ESS/UPS must be highly efficient and reliable over a wide range, including light loads.
SiC's low device capacitance and temperature-independent low loss contribute to raising SWITCHES frequency and improving efficiency across the entire load range.

[Major features]
Low Qg/low Coss allows for increased frequency and EMI suppression
Low Qrr body DIODES reduces losses in bidirectional/boost stages
Suitable for high voltage systems in 1200/1700/2000 V class

Related Product Information 

Link to Related Technical Columns